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|Type:||Artigo de periódico|
|Title:||Raman Phonon Modes Of Zinc Blende Inxga1 - Xn Alloy Epitaxial Layers|
|Abstract:||Transverse-optical (TO) and longitudinal-optical (LO) phonons of zinc blende InxGa1 - xN (0≤x ≤0.31) layers are observed through first-order micro-Raman scattering experiments. The samples are grown by molecular-beam epitaxy on GaAs (001) substrates, and x-ray diffraction measurements are performed to determine the epilayer alloy composition. Both the TO and LO phonons exhibit a one-mode-type behavior, and their frequencies display a linear dependence on the composition. The Raman data reported here are used to predict the A1 (TO) and E1 (TO) phonon frequencies of the hexagonal InxGa1 - xN alloy. © 1999 American Institute of Physics.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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