Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/100853
Type: Artigo de periódico
Title: Raman Phonon Modes Of Zinc Blende Inxga1 - Xn Alloy Epitaxial Layers
Author: Tabata A.
Leite J.R.
Lima A.P.
Silveira E.
Lemos V.
Frey T.
As D.J.
Schikora D.
Lischka K.
Abstract: Transverse-optical (TO) and longitudinal-optical (LO) phonons of zinc blende InxGa1 - xN (0≤x ≤0.31) layers are observed through first-order micro-Raman scattering experiments. The samples are grown by molecular-beam epitaxy on GaAs (001) substrates, and x-ray diffraction measurements are performed to determine the epilayer alloy composition. Both the TO and LO phonons exhibit a one-mode-type behavior, and their frequencies display a linear dependence on the composition. The Raman data reported here are used to predict the A1 (TO) and E1 (TO) phonon frequencies of the hexagonal InxGa1 - xN alloy. © 1999 American Institute of Physics.
Editor: 
Rights: aberto
Identifier DOI: 
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0000727341&partnerID=40&md5=a151dad42991a7225faf01974ccfc451
Date Issue: 1999
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
2-s2.0-0000727341.pdf418.96 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.