Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/100852
Type: Artigo de periódico
Title: Electrical Isolation Of A Silicon δ-doped Layer In Gaas By Ion Irradiation
Author: Danilov I.
De Souza J.P.
Boudinov H.
Murel A.V.
Daniltsev V.M.
Shashkin V.I.
Abstract: The electrical isolation of a n-type δ-doped layer embedded into undoped GaAs was studied using proton or helium ion bombardment. The threshold dose for isolation Dth of the δ-doped layer was found to be ≈2 times higher than that predicted for thick doped layers of similar carrier concentration. The thermal stability of the isolation, i.e., the persistence of sheet resistance Rs at values > 109Ω/□ after subsequent thermal annealing, is limited to temperatures below 400°C. This temperature limit for the thermal stability Tsm is markedly lower than those observed in wider doped layers in which Tsm is ≅650°C. A previously isolated δ-doped layer presents p-type conductivity after annealing at temperatures >600°C . © 1999 American Institute of Physics.
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Rights: aberto
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Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0007162643&partnerID=40&md5=92d9693a77df53bf75fbdcf4cc2a29f6
Date Issue: 1999
Appears in Collections:Unicamp - Artigos e Outros Documentos

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