Please use this identifier to cite or link to this item:
Type: Artigo de periódico
Title: Electrical Isolation Of A Silicon δ-doped Layer In Gaas By Ion Irradiation
Author: Danilov I.
De Souza J.P.
Boudinov H.
Murel A.V.
Daniltsev V.M.
Shashkin V.I.
Abstract: The electrical isolation of a n-type δ-doped layer embedded into undoped GaAs was studied using proton or helium ion bombardment. The threshold dose for isolation Dth of the δ-doped layer was found to be ≈2 times higher than that predicted for thick doped layers of similar carrier concentration. The thermal stability of the isolation, i.e., the persistence of sheet resistance Rs at values > 109Ω/□ after subsequent thermal annealing, is limited to temperatures below 400°C. This temperature limit for the thermal stability Tsm is markedly lower than those observed in wider doped layers in which Tsm is ≅650°C. A previously isolated δ-doped layer presents p-type conductivity after annealing at temperatures >600°C . © 1999 American Institute of Physics.
Rights: aberto
Identifier DOI: 
Date Issue: 1999
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
2-s2.0-0007162643.pdf412.82 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.