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|Type:||Artigo de periódico|
|Title:||Electrical Isolation Of A Silicon δ-doped Layer In Gaas By Ion Irradiation|
De Souza J.P.
|Abstract:||The electrical isolation of a n-type δ-doped layer embedded into undoped GaAs was studied using proton or helium ion bombardment. The threshold dose for isolation Dth of the δ-doped layer was found to be ≈2 times higher than that predicted for thick doped layers of similar carrier concentration. The thermal stability of the isolation, i.e., the persistence of sheet resistance Rs at values > 109Ω/□ after subsequent thermal annealing, is limited to temperatures below 400°C. This temperature limit for the thermal stability Tsm is markedly lower than those observed in wider doped layers in which Tsm is ≅650°C. A previously isolated δ-doped layer presents p-type conductivity after annealing at temperatures >600°C . © 1999 American Institute of Physics.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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