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Type: Artigo de periódico
Title: Environment Of Erbium In A-si:h And A-siox:h
Author: Piamonteze C.
Iniguez A.C.
Tessler L.R.
Martins Alves M.C.
Tolentino H.
Abstract: The chemical environment of Er in a-Si:H and a-SiOx:H was determined by extended x-ray absorption fine structure. Only one family of Er sites is found, coordinated on average with two to three O atoms (compared to six in Er2O3). We devised a new model for the incorporation of Er in a-Si:H and a-SiOx:H. According to the model. Er is incorporated in the form of [ErOδ]+3-2δ complexes, with δ ≤ 3. The minimum configuration energy is achieved for ° = 3 when the valence requirements of Er are fulfilled. The complexes are low symmetry environments that allow the Er3+ luminescent transition at 1.54 μm and make Er an acceptor in a-Si:H whereas it is donor in crystalline silicon.
Rights: aberto
Identifier DOI: 
Date Issue: 1998
Appears in Collections:Unicamp - Artigos e Outros Documentos

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