Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/100837
Type: Artigo de periódico
Title: Environment Of Erbium In A-si:h And A-siox:h
Author: Piamonteze C.
Iniguez A.C.
Tessler L.R.
Martins Alves M.C.
Tolentino H.
Abstract: The chemical environment of Er in a-Si:H and a-SiOx:H was determined by extended x-ray absorption fine structure. Only one family of Er sites is found, coordinated on average with two to three O atoms (compared to six in Er2O3). We devised a new model for the incorporation of Er in a-Si:H and a-SiOx:H. According to the model. Er is incorporated in the form of [ErOδ]+3-2δ complexes, with δ ≤ 3. The minimum configuration energy is achieved for ° = 3 when the valence requirements of Er are fulfilled. The complexes are low symmetry environments that allow the Er3+ luminescent transition at 1.54 μm and make Er an acceptor in a-Si:H whereas it is donor in crystalline silicon.
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Rights: aberto
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Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0001176683&partnerID=40&md5=028b7e98c00e227495a7f67c33b51fa0
Date Issue: 1998
Appears in Collections:Unicamp - Artigos e Outros Documentos

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