Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/100833
Type: Artigo de periódico
Title: Lateral Grain Growth During The Laser Interference Crystallization Of A-si
Author: Aichmayr G.
Toet D.
Mulato M.
Santos P.V.
Spangenberg A.
Christiansen S.
Albrecht M.
Strunk H.P.
Abstract: We used laser interference crystallization (LIC), a combination of pulsed laser crystallization and holography, to fabricate polycrystalline silicon lines in an amorphous silicon (a-Si) film. Under appropriate conditions, the grains in the lines reach in-plane dimensions appreciably larger than the thickness of the initial a-Si film (up to 1.7 μm for a 300 nm a-Si film). Atomic force and transmission electron microscopy indicate that these large grains result from the lateral solidification of the silicon lines melted by the laser pulse. The lateral growth is well reproduced by simulations of the LIC dynamics by means of a two-dimensional melting and solidification model.
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Rights: fechado
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Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0032049347&partnerID=40&md5=54b46636dd77531b1505cdb9ab88f3b0
Date Issue: 1998
Appears in Collections:Unicamp - Artigos e Outros Documentos

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