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|Type:||Artigo de periódico|
|Title:||Shallow Donor States In Gaas-(ga, Al)as Quantum Dots With Different Potential Shapes|
|Abstract:||Energies of the ground and some excited states of on-centre donors (D O) in GaAs/Ga 1-xAl xAs spherical quantum dots are calculated, within the effective mass approximation, as functions of the R dot radius and for different potential shapes. We propose an exact numerical solution for the radial Schrödinger equation in a quantum dot with any arbitrary spherical potential by using a trigonometric sweep method. An evident increase in the binding energy is found as the soft-edqe-barrier potential model is considered. It is found that the D O binding energy increases as the dot size decreases up to a dot radius critical value R = R c and then, for R slightly smaller than R c, the impurity wave function spreads to the barrier region and the 3D character is rapidly restored. The properties of the D O shallow donors in a quantum dot with a double-step potential barrier and multiple barriers are analysed, and two peaks in the binding energy are found. Our results for the spherical-rectangular potential are in good agreement with previous calculations obtained using other methods.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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