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|Type:||Artigo de periódico|
|Title:||Bonding Properties Of Rf-co-sputtering Amorphous Ge-c Films Studied By X-ray Photoelectron And Raman Spectroscopies|
|Abstract:||The bonding properties of hydrogenated amorphous germanium-carbon (a-Ge1-x Cx:H) alloy films, deposited by the rf-co-sputtering technique, were measured by Fourier transform infrared, micro-Raman and X-ray photoelectron spectroscopies. Films with carbon content in the 0 to 100 at.% range were prepared under the same deposition conditions used to prepare a-Ge:H films. The infrared spectra revealed that the carbon is bonded in both sp3 and sp2 configurations. XPS measurements show a chemical shift of the binding energy of the Ge 3d core electrons toward larger energies as the carbon content increases, while the line-width remains almost constant. On the other hand, the peak associated with the C 1s orbital displays a doublet related to the C-Ge and C-C bonds. The Raman spectroscopy data are analyzed over a wide frequency range of the Stokes scattering for different alloy compositions. © 1998 Elsevier Science B.V. All rights reserved.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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