Please use this identifier to cite or link to this item:
|Type:||Artigo de periódico|
|Title:||Erbium Luminescence In A-si:h|
|Abstract:||We have prepared a-Si:H with erbium impurities by co-sputtering. Efficient photoluminescence at 1.54 μm was observed in as-deposited samples. The maximum luminescence efficiency, 17, was found for an Er/Si concentration ∼ 2 at.% in samples prepared under low cathode bias. These samples have columnar structure and have ∼ 3 at.% O/Si. Annealing under oxygen atmosphere at 300°C can increase 17 at room temperature by a factor 3 and η at 77 K by a factor 5. The optimum erbium concentration is two orders of magnitude larger than in ion implanted crystalline silicon or in glasses. Hydrogen concentration is a fundamental parameter to obtain efficient luminescence. This material is a good candidate for Er3+ based photonic devices. © 1998 Elsevier Science B.V. All rights reserved.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.