Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/100819
Type: Artigo de periódico
Title: Erbium Luminescence In A-si:h
Author: Tessler L.R.
Zanatta A.R.
Abstract: We have prepared a-Si:H with erbium impurities by co-sputtering. Efficient photoluminescence at 1.54 μm was observed in as-deposited samples. The maximum luminescence efficiency, 17, was found for an Er/Si concentration ∼ 2 at.% in samples prepared under low cathode bias. These samples have columnar structure and have ∼ 3 at.% O/Si. Annealing under oxygen atmosphere at 300°C can increase 17 at room temperature by a factor 3 and η at 77 K by a factor 5. The optimum erbium concentration is two orders of magnitude larger than in ion implanted crystalline silicon or in glasses. Hydrogen concentration is a fundamental parameter to obtain efficient luminescence. This material is a good candidate for Er3+ based photonic devices. © 1998 Elsevier Science B.V. All rights reserved.
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Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0032068568&partnerID=40&md5=d8c2c25ca3549b0e39813cd96d2a1e4b
Date Issue: 1998
Appears in Collections:Unicamp - Artigos e Outros Documentos

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