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|Type:||Artigo de periódico|
|Title:||Short-pulse Laser Crystallization And Structuring Of A-ge|
|Abstract:||Laser pulses in the nanosecond range were used to crystallize and structure (lateral dimensions ≤ 1 μm) amorphous germanium thin films. The crystallized material consists of grains with sizes increasing from about 5 to more than 20 nm as a function of laser pulse energy. Arrays of polycrystalline Ge dots (diameter ∼ 1 μm, period ∼ 5 μm) were produced by bringing three laser beams to interference on the sample surface. These arrays can be used as seeds for solid-phase growth of polycrystalline areas by thermal annealing below 450°C. © 1998 Elsevier Science B.V. All rights reserved.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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