Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/100818
Type: Artigo de periódico
Title: Short-pulse Laser Crystallization And Structuring Of A-ge
Author: Mulato M.
Toet D.
Aichmayr G.
Spangenberg A.
Santos P.V.
Chambouleyron I.
Abstract: Laser pulses in the nanosecond range were used to crystallize and structure (lateral dimensions ≤ 1 μm) amorphous germanium thin films. The crystallized material consists of grains with sizes increasing from about 5 to more than 20 nm as a function of laser pulse energy. Arrays of polycrystalline Ge dots (diameter ∼ 1 μm, period ∼ 5 μm) were produced by bringing three laser beams to interference on the sample surface. These arrays can be used as seeds for solid-phase growth of polycrystalline areas by thermal annealing below 450°C. © 1998 Elsevier Science B.V. All rights reserved.
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Rights: fechado
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Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0032064328&partnerID=40&md5=31b2271eb2c34d412dc837487c00b47d
Date Issue: 1998
Appears in Collections:Unicamp - Artigos e Outros Documentos

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