Please use this identifier to cite or link to this item:
|Type:||Artigo de periódico|
|Title:||Column Iii And V Elements As Substitutional Dopants In Hydrogenated Amorphous Germanium|
|Abstract:||The doping properties of group III (B, Al, Ga, In) and V (N, P, As) impurities in a-Ge:H films deposited by rf sputtering were systematically studied. The Fermi level (EF), band-gap (E04), Urbach (E0) tail energies, density of midgap defects, ND, and hydrogen content were determined as a function of the impurity concentration by standard methods. It was found that, for a constant amount of different dopant impurities, different EF shifts are obtained, indicating different doping efficiencies. For Al, Ga, and In, the defect density displays a common behavior as a function of Nimp, ND increasing linearly with Nimp for Nimp > 2 X 1019 cm-3. In contrast, for B and all group V elements a ND α (Nimp)1/2 relationship is found. These findings indicate that, for the case of p-type heavy metal doping of a-Ge:H, deep defects are induced by inactive impurities, whereas n-type doping appears to be consistent with a charge-induced bond breaking mechanism. A series of different doping-induced effects highlights the importance of the chemical aspects of substitutional doping in a-semiconductors. © 1998 Elsevier Science B.V. All rights reserved.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.