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|Type:||Artigo de periódico|
|Title:||Growth Mechanisms In Laser Crystallization And Laser Interference Crystallization|
|Abstract:||The processes involved in the pulsed laser crystallization of amorphous silicon thin films were studied using transient reflection measurements. A model of the melting and solidification induced by the laser exposure, based on a one-dimensional calculation of the heat flow, was used to simulate the time-dependent reflectivity, yielding agreement with the experiments. Two laser beams interfering on the sample surface lead to the growth of long grains (up to 1.5 μm), with a well-defined orientation. We conclude that this lateral growth results from explosive crystallization combined with liquid phase growth. © 1998 Elsevier Science B.V. All rights reserved.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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