Please use this identifier to cite or link to this item:
Type: Artigo de periódico
Title: Growth Mechanisms In Laser Crystallization And Laser Interference Crystallization
Author: Aichmayr G.
Toet D.
Mulato M.
Santos P.V.
Spangenberg A.
Bergmann R.B.
Abstract: The processes involved in the pulsed laser crystallization of amorphous silicon thin films were studied using transient reflection measurements. A model of the melting and solidification induced by the laser exposure, based on a one-dimensional calculation of the heat flow, was used to simulate the time-dependent reflectivity, yielding agreement with the experiments. Two laser beams interfering on the sample surface lead to the growth of long grains (up to 1.5 μm), with a well-defined orientation. We conclude that this lateral growth results from explosive crystallization combined with liquid phase growth. © 1998 Elsevier Science B.V. All rights reserved.
Rights: fechado
Identifier DOI: 
Date Issue: 1998
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
2-s2.0-18744435422.pdf216.38 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.