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|Type:||Artigo de periódico|
|Title:||Mapping Of Bragg-surface Diffraction Of Inp/gaas(1 0 0) Structure|
|Abstract:||InP/GaAs(1 0 0) heterostructures grown by gas-source molecular-beam epitaxy were analyzed using three-beam bragg-surface diffraction (BSD) of the X-ray multiple diffraction (MD) phenomenon. The angular MD condition is scanned by varying both, the ω incidence angle and the Φ rotation angle around [1 0 0] in order to provide the mapping of this condition. From the two-dimensional mapping - ω : Φ scan, the crystalline perfection (mosaic spread) parallel (ηΦ) and perpendicular (ηω) to the growth direction can be investigated along the layer surface and the substrate interface. The ω:Φ scan of the 0 0 0, 2 0 0, 1 1̄ 1 BSD is used to analyze the growth processing and post-growth annealing of InP/GaAs samples. The effect of various defect-reduction tools on layer and substrate crystal quality is also investigated. © 1998 Elsevier Science B.V. All rights reserved.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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