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|Type:||Artigo de evento|
|Title:||Silicon Nitride Deposited By Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition For Micromachining Applications|
|Author:||Panepucci Roberto R.|
Diniz Jose A.
Tatsch Peter J.
Swart Jacobus W.
|Abstract:||An investigation of the influence of the process parameters pressure and flow on the room-temperature deposition of electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) of silicon nitride has been performed. The suitability of these films for micromachining applications has been studied, in particular for the use with KOH:isopropyl:H 2O etching solutions. The deposition rate and the effect of process parameters on the physical properties of the films, as-deposited and after KOH etching, were investigated. Buffered HF etch rate, refractive index, and the infrared absorption spectra, especially the Si-N peak absorption wavenumber, were studied. We have found that films that withstand KOH etching with little modification of their physical properties can be obtained at room-temperature for depositions with low flows and low process pressures.|
|Editor:||SPIE, Bellingham, WA, United States|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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