Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/100740
Type: Artigo de evento
Title: Silicon Nitride Deposited By Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition For Micromachining Applications
Author: Panepucci Roberto R.
Diniz Jose A.
Carli Eduardo
Tatsch Peter J.
Swart Jacobus W.
Abstract: An investigation of the influence of the process parameters pressure and flow on the room-temperature deposition of electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) of silicon nitride has been performed. The suitability of these films for micromachining applications has been studied, in particular for the use with KOH:isopropyl:H 2O etching solutions. The deposition rate and the effect of process parameters on the physical properties of the films, as-deposited and after KOH etching, were investigated. Buffered HF etch rate, refractive index, and the infrared absorption spectra, especially the Si-N peak absorption wavenumber, were studied. We have found that films that withstand KOH etching with little modification of their physical properties can be obtained at room-temperature for depositions with low flows and low process pressures.
Editor: SPIE, Bellingham, WA, United States
Rights: aberto
Identifier DOI: 
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0032295605&partnerID=40&md5=f3aad5de47e98c071c7520014dd43ddf
Date Issue: 1998
Appears in Collections:Unicamp - Artigos e Outros Documentos

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