Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/100700
Type: Artigo de periódico
Title: Multi-charged Acceptor Centers In P-doped Si/si1 -xgex/si Quantum Wells In The Presence Of A Magnetic Field
Author: Rego L.G.C.
Brum J.A.
Hawrylak P.
Abstract: Neutral (A0) and positively charged (A+) shallow acceptor centers in p-doped SiGe/Si nanostructures are investigated in the presence of an external magnetic field. The band mixing of valence states, the confinement potential and the magnetic field are responsible for an increase in the binding energy of the system. The properties of the lower-energy states of the A+ are studied and their binding energies calculated for a Si0.87Ge0.13 quantum well. It is shown that the ground state of the A+ complex has a singlet-like parity configuration up to magnetic fields as high as 12 T. The effects of hole-hole repulsive interaction and hole-impurity attractive potential on the A+ spectra are considered. © 1998 Published by Elsevier Science B.V. All rights reserved.
Editor: 
Rights: fechado
Identifier DOI: 
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0346308082&partnerID=40&md5=9793b9b57c00320e07529afb53c5876b
Date Issue: 1998
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
2-s2.0-0346308082.pdf90.18 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.