Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/100699
Type: Artigo de periódico
Title: Carrier Capture Time In T-shaped Semiconductor Quantum Wires
Author: Narvaez G.A.
Aguiar M.C.D.O.
Brum J.A.
Abstract: We investigate the capture time from quasi-two-dimensional (2D) electrons to quasi-one-dimensional (1D) electrons in T-shaped semiconductor quantum wires. Two processes are considered: longitudinal-optical-(LO)-phonon emission and quasi-elastic acoustical-phonon scattering. The quasi-1D ground state is a shallow bound state and is separated by less than one LO-phonon from the quasi-2D continuum. This enhances the LO-phonon emission process which largely dominates the capture process. The effects of the modulation of the density probability of the quasi-2D continuum lead only to a weak dependence of the capture time on the structure parameters. © 1998 Elsevier Science B.V. All rights reserved.
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Rights: fechado
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Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0002700034&partnerID=40&md5=574d5726fb266fc3a2cd2271d7f8fb69
Date Issue: 1998
Appears in Collections:Unicamp - Artigos e Outros Documentos

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