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|Type:||Artigo de periódico|
|Title:||Optical Characterization Of Gaas/alas Multiple Quantum Wells Interfaces|
Carvalho Jr. W.
|Abstract:||The investigation of optical properties in two wide GaAs/AlAs multiple quantum wells is reported. Molecular beam epitaxy growth interruption method was used for both samples. The growth conditions were the same for both, except for the substrate temperature The excitonic peaks in the photoluminescence spectra were observed to be overlapping. Additional information was required for a correct interpretation. This was provided by combining photoluminescence excitation measurements with calculated excitonic energies The calculation was made by using an envelope function approach, and takes into account weakly strained GaAs layers. From this analysis the presence of different wells whose widths vary by one monolayer is suggested. The upper limit in the fluctuations of the well-width was estimated for both samples.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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