Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/100654
Type: Artigo de periódico
Title: Optical Characterization Of Gaas/alas Multiple Quantum Wells Interfaces
Author: Lemos V.
Sergio C.S.
Lima A.P.
Quivy A.A.
Enderlein R.
Leite J.R.
Carvalho Jr. W.
Abstract: The investigation of optical properties in two wide GaAs/AlAs multiple quantum wells is reported. Molecular beam epitaxy growth interruption method was used for both samples. The growth conditions were the same for both, except for the substrate temperature The excitonic peaks in the photoluminescence spectra were observed to be overlapping. Additional information was required for a correct interpretation. This was provided by combining photoluminescence excitation measurements with calculated excitonic energies The calculation was made by using an envelope function approach, and takes into account weakly strained GaAs layers. From this analysis the presence of different wells whose widths vary by one monolayer is suggested. The upper limit in the fluctuations of the well-width was estimated for both samples.
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Rights: fechado
Identifier DOI: 
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0032307442&partnerID=40&md5=768c90d92c8e52b09531b7d96f6391db
Date Issue: 1998
Appears in Collections:Unicamp - Artigos e Outros Documentos

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