Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/100619
Type: Artigo de periódico
Title: Subsurface Microscopy Of Biased Metal-oxide-semiconductor Field-effect-transistor Structures: Photothermal And Electroreflectance Images
Author: Batista J.A.
Mansanares A.M.
Da Silva E.C.
Pimentel M.B.C.
Jannuzzi N.
Fournier D.
Abstract: In this work we used reflectance microscopy to investigate biased metal-oxide - semiconductor field-effect-transistor (MOSFET) structures. A resolution of micrometer is achieved by using visible laser light to probe the gate surface, and both electroreflectance and thermoreflectance components were found in the signal. Image contrast depends upon the bias configuration, and a total of six different types of images can be obtained. The high ability of the technique to detect subsurface defects is also demonstrated. © 1998 Elsevier Science S.A. All rights reserved.
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Rights: fechado
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Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0032209093&partnerID=40&md5=04106c084a7e69847da66c470f88d8c6
Date Issue: 1998
Appears in Collections:Unicamp - Artigos e Outros Documentos

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