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|Type:||Artigo de periódico|
|Title:||Subsurface Microscopy Of Biased Metal-oxide-semiconductor Field-effect-transistor Structures: Photothermal And Electroreflectance Images|
Da Silva E.C.
|Abstract:||In this work we used reflectance microscopy to investigate biased metal-oxide - semiconductor field-effect-transistor (MOSFET) structures. A resolution of micrometer is achieved by using visible laser light to probe the gate surface, and both electroreflectance and thermoreflectance components were found in the signal. Image contrast depends upon the bias configuration, and a total of six different types of images can be obtained. The high ability of the technique to detect subsurface defects is also demonstrated. © 1998 Elsevier Science S.A. All rights reserved.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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