Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/100576
Type: Artigo de periódico
Title: Interaction Of A Laser Field With A Semiconductor System: Application To Shallow-impurity Levels Of Quantum Wells
Author: Brandi H.S.
Latge A.
Oliveira L.E.
Abstract: We extend the dressed-atom approach to treat the interaction of a laser field with a semiconductor system in which the interaction with the laser is incorporated through the renormalization of the semiconductor effective mass. The semiconductor is modeled via a simple parabolic two-band isotropic scheme in the k · p approximation. We compare the effects of the laser dressing on the intradonor transitions in doped GaAs-(Ga,Al)As quantum wells with those produced by an applied external magnetic field. It is shown that these effects may be comparable and therefore experimentally observable. Such approach allows the study of the effects of laser fields on a variety of phenomena in semiconductor systems for which the effective-mass approximation provides a good physical description.
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Rights: fechado
Identifier DOI: 
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0032262952&partnerID=40&md5=0ac60e1ed954e50c04d57b65e507c0c3
Date Issue: 1998
Appears in Collections:Unicamp - Artigos e Outros Documentos

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