Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/100548
Type: Artigo de evento
Title: Crystalline Structure Around The Single Vacancy In Silicon: Formation Volume And Stress Effects
Author: Antonelli A.
Kaxiras Efthimios
Chadi D.J.
Abstract: The crystalline structure surrounding a single neutral vacancy in silicon is investigated through extensive first-principles total-energy calculations. The results indicate the existence of two distinct distortions of the lattice around the vacancy with essentially the same formation energies at zero pressure, but, however, with different formation volumes. The effect of hydrostatic and biaxial stresses on the relative concentration of each distortion is discussed, suggesting experimental ways to investigate the crystalline structure around the single vacancy and its role as a mediator of atomic diffusion in silicon.
Editor: MRS, Warrendale, PA, United States
Rights: fechado
Identifier DOI: 
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0031619264&partnerID=40&md5=754758048f8bb89f38956bb99defbc44
Date Issue: 1998
Appears in Collections:Unicamp - Artigos e Outros Documentos

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