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|Type:||Artigo de periódico|
|Title:||Micro-raman And Electron Microscopy Analysis Of Cubic Gan Layers On (001) Gaas|
|Abstract:||Cubic GaN layers are grown by molecular beam epitaxy on (001) GaAs substrates. The influence of intentional deviations from stoichiometric growth conditions on the structural homogeneity of the epitaxial layers is studied. Optical micrographs of the epilayers grown at Ga-excess reveal the existence of microcrystalline inclusions such as bright rectangular structures, dark dots surrounded by rectangles, and dark dots without rectangles. Micro-Raman spectroscopy is used to study the structural properties of these inclusions and of the epilayers in greater detail. We find that the dots are GaN microcrystals of either hexagonal structure or of cubic structure. The rectangles are GaN regions of cubic structure like the epilayer itself.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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