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|Type:||Artigo de periódico|
|Title:||On The Hardness Of A-c:h Films Prepared By Methane Plasma Decomposition|
|Abstract:||Hard, thick, and almost stress free a-C:H films prepared by methane plasma decomposition are reported. The films were prepared on the cathode electrode of a conventional r.f.-sputtering system in the - 100 to - 1200 bias voltage range. The properties of films were determined using optical transmission spectroscopy, Raman spectroscopy, hardness, and stress measurements. Films with high hardness (18 GPa) and very low stress (0.7 GPa) were obtained. It is proposed that the network rigidity of the films with low stress is mainly maintained by a matrix of dispersed sp2 sites, in addition to some contribution of the sp3 C-C sites. The stress versus bias voltage dependence supports the subimplantation model, indicating that it also explains the origin of stress in films prepared by r.f. plasma decomposition. © 1998 Elsevier Science S.A. All rights reserved.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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