Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/100438
Type: Artigo de periódico
Title: On The Hardness Of A-c:h Films Prepared By Methane Plasma Decomposition
Author: Marques F.C.
Lacerda R.G.
Odo G.Y.
Lepienski C.M.
Abstract: Hard, thick, and almost stress free a-C:H films prepared by methane plasma decomposition are reported. The films were prepared on the cathode electrode of a conventional r.f.-sputtering system in the - 100 to - 1200 bias voltage range. The properties of films were determined using optical transmission spectroscopy, Raman spectroscopy, hardness, and stress measurements. Films with high hardness (18 GPa) and very low stress (0.7 GPa) were obtained. It is proposed that the network rigidity of the films with low stress is mainly maintained by a matrix of dispersed sp2 sites, in addition to some contribution of the sp3 C-C sites. The stress versus bias voltage dependence supports the subimplantation model, indicating that it also explains the origin of stress in films prepared by r.f. plasma decomposition. © 1998 Elsevier Science S.A. All rights reserved.
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Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0032476354&partnerID=40&md5=ae042e1c2f3ca6a2e8e70efd97dd85c6
Date Issue: 1998
Appears in Collections:Unicamp - Artigos e Outros Documentos

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