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|Type:||Artigo de periódico|
|Title:||Optical Detection Of Charge Redistribution In A δ Modulation-doped Gaas-alxga1-xas Heterojunction|
|Abstract:||We have investigated magnetically-induced charge redistribution within a δ modulation-doped GaAs-AlxGa1-xAs heterojunction structure by studying the photoluminescence due to electrons from the two-dimensional (2D) electron system recombining with photoexcited holes. At well defined values of magnetic field, charge transfer occurs between this 2D electron system and the V-shaped potential well formed in the AlxGa1-xAs by Si δ modulation-doping. This redistribution of charge is observed as discontinuities in the photoluminescence energies. From these measurements we have derived the characteristic transfer time for electrons to move between these two wells. © 1998 Published by Elsevier Science Ltd. All rights reserved.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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