Please use this identifier to cite or link to this item:
|Type:||Artigo de periódico|
|Title:||Interface Roughness Effects In Resonant Tunneling Structures|
|Author:||Galvao Gobato Y.|
|Abstract:||We have measured I(V) characteristics and photoluminescence spectra of GaAs/In0.1Ga0.9As/AlAs double harrier diode with interface roughness and island formation in the quantum well (QW). Typical QW photolummescence (PL) and photoluminescence excitation (PLE) spectra present a splitting for the fundamental transition due to island formation in the QW. The position, intensity and linewidth of these lines are investigated as a function of applied bias photoexcitation intensity and temperature.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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