Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/100379
Type: Artigo de periódico
Title: Interface Roughness Effects In Resonant Tunneling Structures
Author: Galvao Gobato Y.
Triques A.L.C.
Schulz P.A.
Abstract: We have measured I(V) characteristics and photoluminescence spectra of GaAs/In0.1Ga0.9As/AlAs double harrier diode with interface roughness and island formation in the quantum well (QW). Typical QW photolummescence (PL) and photoluminescence excitation (PLE) spectra present a splitting for the fundamental transition due to island formation in the QW. The position, intensity and linewidth of these lines are investigated as a function of applied bias photoexcitation intensity and temperature.
Editor: 
Rights: fechado
Identifier DOI: 
Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0031272021&partnerID=40&md5=6ae02c5a2220b25de2de65f1520bd051
Date Issue: 1997
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
2-s2.0-0031272021.pdf144.89 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.