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Type: Artigo de periódico
Title: Interface Roughness Effects In Resonant Tunneling Structures
Author: Galvao Gobato Y.
Triques A.L.C.
Schulz P.A.
Abstract: We have measured I(V) characteristics and photoluminescence spectra of GaAs/In0.1Ga0.9As/AlAs double harrier diode with interface roughness and island formation in the quantum well (QW). Typical QW photolummescence (PL) and photoluminescence excitation (PLE) spectra present a splitting for the fundamental transition due to island formation in the QW. The position, intensity and linewidth of these lines are investigated as a function of applied bias photoexcitation intensity and temperature.
Rights: fechado
Identifier DOI: 
Date Issue: 1997
Appears in Collections:Unicamp - Artigos e Outros Documentos

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