Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/100356
Type: Artigo de periódico
Title: Synchrotron Radiation Multiple Diffraction Study Of Al0.304ga0.172in0.524 As Movpe Grown Onto Inp(001)
Author: Sasaki J.M.
Cardoso L.P.
Campos C.
Roberts K.J.
Clark G.F.
Pantos E.
Sacilotti M.A.
Abstract: Synchrotron radiation multiple diffraction in Renninger scanning (RS) geometry is used to characterise an Al0.304Ga0.172In0.524As hetero-epitaxial layer MOVPE grown onto InP(001). (006) RS data for bulk, InP substrate and the quaternary layer were obtained using a new experimental set-up on station 7.6 at the Daresbury synchrotron radiation source. Examination of the multiple diffraction peak profiles reveal the epitaxial layers to have a higher mosaic spread than the underlying substrate materials. Measurements of the layer parallel lattice parameter a∥ = 5.8755 ± 0.0003 Å, as deduced from the tetragonal distortion measured at the 6-beam case in the layer RS, agrees very well with that obtained from the 222 222 intensity modulation on the substrate RS MORSI (modulation on the RS intensity due to the presence of the epilayers, Greenberg and Ladell, Appl. Phys. Lett 50 (1987) 436), which gives a∥ = 5.877 ± 0.002 Å. Simulation of the layer RS using the MULTX program is consistent with a layer normal lattice parameter a⊥ = 5.8574 Å in good agreement with the corresponding experimental data.
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Rights: fechado
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Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0031103154&partnerID=40&md5=80f83ac9e9d5d8191f29f3b96e440a0d
Date Issue: 1997
Appears in Collections:Unicamp - Artigos e Outros Documentos

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