Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/100232
Type: Artigo de periódico
Title: Deposition Of Silicon Nitride By Low-pressure Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition In N2/ar/sih4
Author: Moshkalyov S.A.
Diniz J.A.
Swart J.W.
Tatsch P.J.
Machida M.
Abstract: Plasma deposition of silicon nitride on silicon substrates in a microwave electron cyclotron resonance N2/Ar/SiH4 discharge was studied as a function of gas pressure (1-5 mTorr), gas composition, and discharge power (250-1000 W). The dependencies of deposition parameters on discharge characteristics obtained at 1 mTorr appear to be essentially different from those at higher pressures. Optical emission spectroscopy was used for plasma characterization. A high degree of ionization and dissociation of gas molecules was observed under present plasma conditions. It is shown that the contribution of ionized species to film deposition is comparable with that of neutral ones under high power and low pressure conditions. The best quality of films was obtained at a moderate rather than the highest available dissociation degree of silane. © 1997 American Vacuum Society.
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Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0038456603&partnerID=40&md5=e4f57a65ffa20ac45ac3f3a2e89afbb9
Date Issue: 1997
Appears in Collections:Unicamp - Artigos e Outros Documentos

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