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|Type:||Artigo de periódico|
|Title:||Growth Of Self-organized Ingaas Islands By Molecular Beam Epitaxy|
|Abstract:||We have grown several sets of self-organized InxGa1-xAs islands by molecular beam epitaxy and varied some parameters as growth temperature, In content and substrate orientation. Atomic force microscopy measurements were carried out to investigate the influence of these parameters on the morphological characteristics of the dots.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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