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|Type:||Artigo de periódico|
|Title:||Radiative And Nonradiative Recombinations In Quantum-well Wires|
De Dios-Leiva M.
|Abstract:||A quantum-mechanical calculation and phenomenologial treatment of radiative and non-radiative recombinations are performed respectively, in GaAs - (Ga, Al)As quantum-well wires, excited by a cw laser in a photoluminescence experiment under quasistationary excitation conditions, considering the radii of quantum well wire, temperature and different densities of shallow and deep impurities, are performed. In the case of shallow impurities, we work within the effective-mass approximation and the parabolic-band model for describing both electrons and holes, and to consider in the steady state, the interband absorption, and some radiative recombination mechanisms, such as recombination of electrons with free holes and with holes bound at acceptors. The effects of deep impurities (traps) are studied at room temperature of phenomenological form where the nonradiative rates associated with transitions involving electrons falling into traps, and traped electrons recombining with free holes.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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