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|Type:||Artigo de periódico|
|Title:||Interface Roughness Studies In Double Barrier Structures|
|Author:||Galvao Gobato Y.|
|Abstract:||Photoluminescence spectroscopy is used to investigate tunneling of electrons and holes through GaAs/In)0.11Ga0.9As/AlAs double barrier tunneling structure with interface roughness. Typical quantum well photoluminescence spectra present a splitting atributed to interface roughness effects, namely growth island formation in the quantum well. The position, intensity and linewidth of these lines are investigated as function of applied bias and temperature. The integrated photoluminescence intensity and linewidth of both lines are correlated to tunnel current bias in the low photoexcitation intensity. A transfer of carrier between these islands is observed at the begining of resonant tunneling regime. Finally, the states of these islands are selectively populated by electrons and holes with applied bias.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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