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|Type:||Artigo de periódico|
|Title:||Photon-assisted Tunnelling Studies In Double Barrier Structures|
|Author:||Galvao Gobato Y.|
|Abstract:||We have measured I(V) characteristics and photoluminescence spectra of a double barrier diode with roughness interface and island formation in the quantum well under high photoexcitation intensity. We have observed a reduction of the resonant peak, peak to valley ratio and bistability region in the I(V) characteristics due to the change of electronic charge stored in the well induced by photon absorption and emission process. The photoluminescence spectra under high photoexcitation intensity are measured as a function of applied bias and temperature. A saturation effect is observed for the lowest energy peak which reduces the transfer of carriers between islands in the tunnelling process.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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