Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/100034
Type: Artigo de periódico
Title: Photon-assisted Tunnelling Studies In Double Barrier Structures
Author: Galvao Gobato Y.
Triques A.L.C.
Abstract: We have measured I(V) characteristics and photoluminescence spectra of a double barrier diode with roughness interface and island formation in the quantum well under high photoexcitation intensity. We have observed a reduction of the resonant peak, peak to valley ratio and bistability region in the I(V) characteristics due to the change of electronic charge stored in the well induced by photon absorption and emission process. The photoluminescence spectra under high photoexcitation intensity are measured as a function of applied bias and temperature. A saturation effect is observed for the lowest energy peak which reduces the transfer of carriers between islands in the tunnelling process.
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Rights: fechado
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Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0031322574&partnerID=40&md5=4300ad0d06b3d12b6327d7480515b23c
Date Issue: 1997
Appears in Collections:Unicamp - Artigos e Outros Documentos

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