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Type: Artigo de periódico
Title: Time Resolved Photoreflectance In Si:gaas Delta Doped Superlattices
Author: Bell M.J.V.
De Sousa D.F.
Nunes L.A.O.
Abstract: In this paper we present a new Time Resolved Photoreflectance (TRPR) in δ-Si:GaAs superlattices. It is shown that PR spectra yield three contributions:(1) from intrinsic GaAs, (2) FKO due to the surface electric field and (3) FKO attributed to the buffer/superlattice interface. TRPR showed that the first contribution has the longest response time, while the second is faster and can be explained by a model proposed by Shen [1]. We interpret the faster characteristic decay times as the carriers recombination time of the first delta-doping plane and the surface states.
Rights: fechado
Identifier DOI: 
Date Issue: 1997
Appears in Collections:Unicamp - Artigos e Outros Documentos

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