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|Type:||Artigo de periódico|
|Title:||Time Resolved Photoreflectance In Si:gaas Delta Doped Superlattices|
De Sousa D.F.
|Abstract:||In this paper we present a new Time Resolved Photoreflectance (TRPR) in δ-Si:GaAs superlattices. It is shown that PR spectra yield three contributions:(1) from intrinsic GaAs, (2) FKO due to the surface electric field and (3) FKO attributed to the buffer/superlattice interface. TRPR showed that the first contribution has the longest response time, while the second is faster and can be explained by a model proposed by Shen . We interpret the faster characteristic decay times as the carriers recombination time of the first delta-doping plane and the surface states.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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