Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/100031
Type: Artigo de periódico
Title: Time Resolved Photoreflectance In Si:gaas Delta Doped Superlattices
Author: Bell M.J.V.
De Sousa D.F.
Nunes L.A.O.
Abstract: In this paper we present a new Time Resolved Photoreflectance (TRPR) in δ-Si:GaAs superlattices. It is shown that PR spectra yield three contributions:(1) from intrinsic GaAs, (2) FKO due to the surface electric field and (3) FKO attributed to the buffer/superlattice interface. TRPR showed that the first contribution has the longest response time, while the second is faster and can be explained by a model proposed by Shen [1]. We interpret the faster characteristic decay times as the carriers recombination time of the first delta-doping plane and the surface states.
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Rights: fechado
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Address: http://www.scopus.com/inward/record.url?eid=2-s2.0-0031312057&partnerID=40&md5=c93b97dd4af98473ee762c824b9d36b1
Date Issue: 1997
Appears in Collections:Unicamp - Artigos e Outros Documentos

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