Browsing by Author Brasil, MJSP

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PreviewIssue DateTitleAuthor(s)AdvisorType
2011Optical properties of multi-layer type II InP/GaAs quantum dots studied by surface photovoltage spectroscopyIvanov, T; Donchev, V; Germanova, K; Gomes, PF; Iikawa, F; Brasil, MJSP; Cotta, MA-Artigo de periódico
2010Optical emission and its decay time of type-II InP/GaAs quantum dotsGomes, PF; de Godoy, MPF; Dias, GO; Iikawa, F; Brasil, MJSP; Cotta, MA; Madureira, JR-Artigo de periódico
2008Polarization resolved luminescence in asymmetric n-type GaAs/AlGaAs resonant tunneling diodesdos Santos, LF; Gobato, YG; Lopez-Richard, V; Marques, GE; Brasil, MJSP; Henini, M; Airey, RJ-Artigo de periódico
2010Valence-band splitting energies in wurtzite InP nanowires: Photoluminescence spectroscopy and ab initio calculationsGadret, EG; Dias, GO; Dacal, LCO; de Lima, MM; Ruffo, CVRS; Iikawa, F; Brasil, MJSP; Chiaramonte, T; Cotta, MA; Tizei, LHG; Ugarte, D; Cantarero, A-Artigo de periódico
2009Ambipolar diffusion and spatial and time-resolved spectroscopies in semiconductor heterostructuresVasconcellos, AR; Brasil, MJSP; Luzzi, R; Silva, AAP; Leite, AHS-Artigo de periódico
2006Voltage-controlled hole spin injection in nonmagnetic GaAs/AlAs resonant tunneling structuresde Carvalho, HB; Gobato, YG; Brasil, MJSP; Lopez-Richard, V; Marques, GE; Camps, I; Henini, M; Eaves, L; Hill, G-Artigo de periódico
2002Thermal equilibrium governing the formation of negatively charged excitons in resonant tunneling diodesVercik, A; Gobato, YG; Brasil, MJSP-Artigo de periódico
1998Interface roughness localization in quantum wells and quantum wiresRasnik, I; Rego, LGC; Marquezini, MV; Triques, ALC; Brasil, MJSP; Brum, JA; Cotta, MA-Artigo de periódico
2005Ferromagnetic nanoclusters formed by Mn impllantation in GaAs - art. no. 071306Couto, ODD; Brasil, MJSP; Iikawa, F; Giles, C; Adriano, C; Bortoleto, JRR; Pudenzi, MAA; Gutierrez, HR; Danilov, I-Artigo de periódico
2002On the origin of the blueshift from type-II quantum dots emission using microphotoluminescenceNakaema, MKK; Iikawa, F; Brasil, MJSP; Ribeiro, E; Medeiros-Ribeiro, G; Carvalho, W; Maialle, MZ; Degani, MH-Artigo de periódico
1998On the optical properties of InAs/InP systems: The role of two-dimensional structures and three-dimensional islandsMendonca, CAC; Laureto, E; Brasil, MJSP; Cotta, MA; Carvalho, MMG; Meneses, EA-Artigo de periódico
1996Exciton dynamics in a single quantum well with self-assembled islandsMarquezini, MV; Brasil, MJSP; Brum, JA; Poole, P; Charbonneau, S; Tamargo, MC-Artigo de periódico
2013Excitonic wavefunction engineering based on type II quantum dotsDacal, LCO; Iikawa, F; Brasil, MJSP-Artigo de periódico
2000Light scattering and atomic force microscopy study of InAs island formation on InPRasnik, I; Brasil, MJSP; Cerdeira, F; Mendonca, CAC; Cotta, MA-Artigo de periódico
2010Nucleation and growth evolution of InP dots on InGaP/GaAsBortoleto, JRR; Gazoto, A; Brasil, MJSP; Meneses, EA; Cotta, MA-Artigo de periódico
2007Spatially indirect excitons in type-II quantum dotsMadureira, JR; de Godoy, MPF; Brasil, MJSP; Iikawa, F-Artigo de periódico
2011Spatial carrier distribution in InP/GaAs type II quantum dots and quantum postsIikawa, F; Donchev, V; Ivanov, T; Dias, GO; Tizei, LHG; Lang, R; Heredia, E; Gomes, PF; Brasil, MJSP; Cotta, MA; Ugarte, D; Pastor, JPM; de Lima, MM; Cantarero, A-Artigo de periódico
1998Improving the signal-to-noise ratio of femtosecond luminescence upconversion by multichannel detectionHaacke, S; Taylor, RA; Bar-Joseph, I; Brasil, MJSP; Hartig, M; Deveaud, B-Artigo de periódico
2003Optical and x-ray diffraction studies on the incorporation of carbon as a dopant in cubic GaNFernandez, JRL; Cerdeira, F; Meneses, EA; Brasil, MJSP; Soares, JANT; Santos, AM; Noriega, OC; Leite, JR; As, DJ; Kohler, U; Potthast, S; Pacheco-Salazar, DG-Artigo de periódico
2005Optical and structural investigation of In1-xGaxP free-standing microrodsNakaema, MKK; Godoy, MPF; Brasil, MJSP; Iikawa, F; Silva, D; Sacilotti, M; Decobert, J; Patriarche, G-Artigo de periódico