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Type: Artigo de periódico
Title: New Paramagnetic Center In Amorphous Silicon Doped With Rare-earth Elements
Author: Castilho J.H.
Marques F.C.
Barberis G.E.
Rettori C.
Alvarez F.
Chambouleyron I.
Abstract: A new paramagnetic center associated with rare earths (RE) (La, Ce, Pr, Nd, Gd, Er, and Lu) in amorphous silicon is reported. It is shown that RE impurities are incorporated in a-Si and that the density of paramagnetic dangling bonds decreases as a consequence of the presence of these impurities. An interpretation in terms of RE 6s orbitals and crystal-field-split 5d orbital hybridization suggests that the RE behaves as an acceptor impurity with an associated hole in the a-Si valence-band tail, which is responsible for the observed resonance at a g value of 2.100.01. © 1989 The American Physical Society.
Citation: Physical Review B. , v. 39, n. 4, p. 2860 - 2863, 1989.
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.39.2860
Date Issue: 1989
Appears in Collections:Unicamp - Artigos e Outros Documentos

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