Please use this identifier to cite or link to this item:
|Type:||Artigo de periódico|
|Title:||Non-parabolicity And Anisotropy Effects On The Conduction-electron Effective G Factor In Gaas - Ga1 - X Alx As Quantum Well Wires|
|Abstract:||The effective electron Landé factor in GaAs - Ga1 - x Alx As rectangular quantum well wires, under magnetic fields applied along the wire axis, is studied by taking into account the non-parabolicity and anisotropy of the conduction band within the Ogg-McCombe effective Hamiltonian. Confinement effects on the electron wavefunctions are explored in order to evaluate its influence on the behavior of the effective Landé factor. Calculations for the electron g∥ factor in GaAs - Ga1 - x Alx As rectangular quantum well wires are compared with the previous theoretical results obtained for GaAs - Ga1 - x Alx As cylindrical quantum well wires. Such comparison clearly indicates the influence of the wire shape on the electron Landé factor in GaAs - Ga1 - x Alx As quantum well wires. © 2008 Elsevier B.V. All rights reserved.|
|Citation:||Physica E: Low-dimensional Systems And Nanostructures. , v. 41, n. 2, p. 240 - 244, 2008.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.