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Type: Artigo de periódico
Title: Effects Of Hydrostatic Pressure On The Electron Parallel Factor And G || Factor Anisotropy In Gaas-(ga, Al)as Antum Wells Under Magnetic Fields
Author: Porras-Montenegro N.
Duque C.A.
Reyes-Gomez E.
Oliveira L.E.
Abstract: The hydrostatic-pressure effects on the electron-effective Landé factor and g-factor anisotropy in semiconductor GaAs-Ga1-xAl xAs quantum wells under magnetic fields are studied. The factor is computed by considering the non-parabolicity and anisotropy of the conduction band through the Ogg-McCombe effective Hamiltonian, and numerical results are displayed as functions of the applied hydrostatic pressure, magnetic fields, and quantum-well widths. Good agreement between theoretical results and experimental measurements in GaAs-(Ga, Al)As quantum wells for the electron g factor and g-factor anisotropy at low values of the applied magnetic field and in the absence of hydrostatic pressure is obtained. Present results open up new possibilities for manipulating the electron-effective g factor in semiconductor heterostructures. © 2008 IOP Publishing Ltd.
Citation: Journal Of Physics Condensed Matter. , v. 20, n. 46, p. - , 2008.
Rights: fechado
Identifier DOI: 10.1088/0953-8984/20/46/465220
Date Issue: 2008
Appears in Collections:Unicamp - Artigos e Outros Documentos

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