Browsing by Author Brasil, MJSP

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PreviewIssue DateTitleAuthor(s)AdvisorType
2007Properties of GaAs/InGaAs Quantum-Size Structures Containing delta < Mn >-Doped LayersVikhrova, OV; Danilov, YA; Drozdov, YN; Zvonkov, BN; Iikawa, F; Brasil, MJSP-Artigo de periódico
2013Laser irradiation of carbon nanotube films: Effects and heat dissipation probed by Raman spectroscopyMialichi, JR; Brasil, MJSP; Iikawa, F; Verissimo, C; Moshkalev, SA-Artigo de periódico
2005Kinetics of excitonic complexes on tunneling devicesVercik, A; Gobato, YG; Camps, I; Marques, GE; Brasil, MJSP; Makler, SS-Artigo de periódico
2005Lattice distortion effects on the magnetostructural phase transition of MnAsIikawa, F; Brasil, MJSP; Adriano, C; Couto, ODD; Giles, C; Santos, PV; Daweritz, L; Rungger, I; Sanvito, S-Artigo de periódico
2007Light controlled spin polarization in asymmetric n-type resonant tunneling diodeDos Santos, LF; Gobato, YG; Marques, GE; Brasil, MJSP; Henini, M; Airey, R-Artigo de periódico
2000Light scattering and atomic force microscopy study of InAs island formation on InPRasnik, I; Brasil, MJSP; Cerdeira, F; Mendonca, CAC; Cotta, MA-Artigo de periódico
1998Interface roughness localization in quantum wells and quantum wiresRasnik, I; Rego, LGC; Marquezini, MV; Triques, ALC; Brasil, MJSP; Brum, JA; Cotta, MA-Artigo de periódico
2010Nucleation and growth evolution of InP dots on InGaP/GaAsBortoleto, JRR; Gazoto, A; Brasil, MJSP; Meneses, EA; Cotta, MA-Artigo de periódico
2002Thermal equilibrium governing the formation of negatively charged excitons in resonant tunneling diodesVercik, A; Gobato, YG; Brasil, MJSP-Artigo de periódico
2008Role of X valley on the dynamics of electron transport through a GaAs/AlAs double-barrier structureGaleti, HVA; de Carvalho, HB; Brasil, MJSP; Gobato, Y; Lopez-Richard, V; Marques, GE; Henini, M; Hill, G-Artigo de periódico
2012Spin injection in n-type resonant tunneling diodesGordo, VO; Herval, LKS; Galeti, HVA; Gobato, YG; Brasil, MJSP; Marques, GE; Henini, M; Airey, RJ-Artigo de periódico
2011Spin injection from two-dimensional electron and hole gases in resonant tunneling diodesGobato, YG; Galeti, HVA; dos Santos, LF; Lopez-Richard, V; Cesar, DF; Marques, GE; Brasil, MJSP; Orlita, M; Kunc, J; Maude, DK; Henini, M; Airey, RJ-Artigo de periódico
2011Spin effects in InAs self-assembled quantum dotsdos Santos, EC; Gobato, YG; Brasil, MJSP; Taylor, DA; Henini, M-Artigo de periódico
2011Circular polarization in a non-magnetic resonant tunneling devicedos Santos, LF; Gobato, YG; Teodoro, MD; Lopez-Richard, V; Marques, GE; Brasil, MJSP; Orlita, M; Kunc, J; Maude, DK; Henini, M; Airey, RJ-Artigo de periódico
2007Circular polarization from a nonmagnetic p-i-n resonant tunneling diodede Carvalho, HB; Brasil, MJSP; Gobato, YG; Marques, GE; Galeti, HVA; Henini, M; Hill, G-Artigo de periódico
2012Magneto-optical investigation of two-dimensional gases in n-type resonant tunneling diodesGaleti, HVA; Gobato, YG; Gordo, VO; dos Santos, LF; Brasil, MJSP; Lopez-Richard, V; Marques, GE; Orlita, M; Kunc, J; Maude, DK; Henini, M; Airey, RJ-Artigo de periódico
1996Magnetoexciton anisotropy in quantum wells versus quantum wiresMarquezini, MV; Brasil, MJSP; Cotta, MA; Brum, JA; Bernussi, AA-Artigo de periódico
2000An optical study of self-assembled InxGa1-xAs/GaAs quantum dots embedded in a two-dimensional electron gasRibeiro, E; Cerdeira, F; Brasil, MJSP; Heinzel, T; Ensslin, K; Medeiros-Ribeiro, G; Petroff, PM-Artigo de periódico
2013Compensation effect on the CW spin-polarization degree of Mn-based structuresBalanta, MAG; Brasil, MJSP; Iikawa, F; Mendes, UC; Brum, JA; Maialle, MZ; Danilov, YA; Vikhrova, OV; Zvonkov, BN-Artigo de periódico
2008Polarization resolved luminescence in asymmetric n-type GaAs/AlGaAs resonant tunneling diodesdos Santos, LF; Gobato, YG; Lopez-Richard, V; Marques, GE; Brasil, MJSP; Henini, M; Airey, RJ-Artigo de periódico